Circular ferroelectric tunnel junctions for the improvement of memory window and endurance

Functional ferroelectric tunnel junctions on silicon

The quest for solid state non-volatility memory devices on silicon with high storage density, high speed, low power consumption has attracted intense research on new materials and novel device architectures. Although flash memory dominates in the non-volatile memory market currently, it has drawbacks, such as low operation speed, and limited cycle endurance, which prevents it from becoming the ...

Ferroelectric tunnel junctions with graphene electrodes.

Polarization-driven resistive switching in ferroelectric tunnel junctions (FTJs)--structures composed of two electrodes separated by an ultrathin ferroelectric barrier--offers new physics and materials functionalities, as well as exciting opportunities for the next generation of non-volatile memories and logic devices. Performance of FTJs is highly sensitive to the electrical boundary condition...

Giant Electroresistance in Ferroelectric Tunnel Junctions

the survey of the virtual higher education in iran and the ways of its development and improvement

این پژوهش با هدف "بررسی وضعیت موجود آموزش عالی مجازی در ایران و راههای توسعه و ارتقای آن " و با روش توصیفی-تحلیلی و پیمایشی صورت پذیرفته است. بررسی اسنادو مدارک موجود در زمینه آموزش مجازی نشان داد تعداد دانشجویان و مقاطع تحصیلی و رشته محل های دوره های الکترونیکی چندان مطلوب نبوده و از نظر کیفی نیز وضعیت شاخص خدمات آموزشی اساتید و وضعیت شبکه اینترنت در محیط آموزش مجازی نامطلوب است.

Encoding, training and retrieval in ferroelectric tunnel junctions

Ferroelectric tunnel junctions (FTJs) are quantum nanostructures that have great potential in the hardware basis for future neuromorphic applications. Among recently proposed possibilities, the artificial cognition has high hopes, where encoding, training, memory solidification and retrieval constitute a whole chain that is inseparable. However, it is yet envisioned but experimentally unconfirm...